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New Thin-Film Tunnel Triode Using Amorphous Semiconductors

Description: 
A new thin‐film tunnel triode is discussed which uses a p‐type amorphous film to achieve amplification of injected current from a tunnel cathode. It is not only the basis for a new semiconductor device but also suggests a novel method for measuring electrical properties of semiconductors.
Record Format: 
application/pdf
1972-04-01T08:00:00Z
Subject: 
Triodes
Thin films
Amorphous semiconductors
Physics
Type: 
text
Raw Url: 
http://pdxscholar.library.pdx.edu/do/oai/?metadataPrefix=&verb=GetRecord&identifier=oai:pdxscholar.library.pdx.edu:phy_fac-1127
Source: 
Physics Faculty Publications and Presentations
Repository Record Id: 
oai:pdxscholar.library.pdx.edu:phy_fac-1127
SetSpec: 
publication:phy_fac
publication:phy
publication:clas
publication:communities
Record Title: 
New Thin-Film Tunnel Triode Using Amorphous Semiconductors
https://pdxscholar.library.pdx.edu/phy_fac/128
info:doi/10.1063/1.1654128
https://pdxscholar.library.pdx.edu/context/phy_fac/article/1127/viewcontent/smejtek_newthinfilmtunnel.pdf
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